1 SSF2715 features extremely high dv/dt capability low gate charge qg results in simple drive requirement 100% avalanche tested gate charge minimized very low intrinsic capacitances very good manufacturing repeatability description SSF2715 is a new generation of high voltage n?channel enhancement mode power mosfets and is obtained through an extreme optimization layout design, in additional to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability, provide superior switching performance, withstand high energy pulse in the avalanche, and i ncreases packing density. application high current, high speed switching lighting ideal for off-line power supply, adaptor, pfc absolute maximum ratings parameter max. units i d @tc=25 ? c continuous drain current,v gs @10v 5 a i d @tc=100 ? c continuous drain current,v gs @10v 3 i dm pulsed drain current 20 p d @t c =25 ? c power dissipation 80 w linear derating factor 0.67 w/ ? c v gs gate-to-source voltage 30 v e as single pulse avalanche energy 120 mj i ar avalanche current 5 a e ar repetitive avalanche energy 8.5 mj dv/dt peak diode recovery dv/dt 4.5 v/ns t j t stg operating junction and storage temperature range C 55 to +150 ? c thermal resistance parameter min. typ. max. units r jc junction-to-case 1.56 ? c/w r cs case-to-sink,flat,greased surface 0.50 r ja junction-to-ambient 62.5 v dss = 500v i d = 5a r ds(on) = 1.2 SSF2715 top view (to220)
2 SSF2715 electrical characteristics @t j =25 ? c(unless otherwise specified) parameter min. typ. max. units test conditions v (br)dss drain-to-source breakdown voltage 500 v v gs =0v,i d = 250 a v (br)dss / t j breakdown voltage temp.coefficient 0.6 v/ ? c reference to 25 ? c,i d =250 a r ds(on) static drain-to-source on-resistance 1.15 1.2 v gs =10v,i d =2.5a v gs(th) gate threshold voltage 2.0 4.0 v v ds =v gs ,i d =250 a g fs forward transconductance 4.3 s v ds =40v,i d =2.25a i dss drain-to-source leakage current 1 a v ds =500v,v gs =0v 10 v ds =400v,v gs =0v,t j =150 ? c i gss gate-to-source forward leakage 100 na v gs =30v gate-to-source reverse leakage -100 v gs =-30v q g total gate charge 11 15 nc i d =5a v ds =400v v gs =10v q gs gate-to-source charge 3 q gd gate-to-drain("miller") charge 5 t d(on) turn-on delay time 13 36 ns v dd =250v i d =5a r g =25 ? t r rise time 22 54 t d(off) turn-off delay time 28 66 t f fall time 20 50 c iss input capacitance 515 670 pf v gs =0v v ds =25v f =1.0mh z c oss output capacitance 55 72 c rss reverse transfer capacitance 6.5 8.5 source-drain ratings and characteristics parameter min. typ. max. units test conditions i s continuous source current . (body diode) 5 a mosfet symbol showing the integral reverse p-n junction diode. i sm pulsed source current . (body diode) 20 v sd diode forward voltage 1.4 v t j =25 ? c,i s =5a,v gs =0v t rr reverse recovery time 300 ns t j =25 ? c,i f =5a di/dt=100a/ s q rr reverse recovery charge 1.8 uc notes: repetitive rating; pulse width limited by i sd 5a,di/dt 200a/ s, v dd v (br)dss , maxiimum. junction temperature tj 25 ? c l = 15mh, ias =4 a, vdd = 50v, pulse width 300 s; duty cycle 2% rg = 25 ? , starting tj = 25c
3 SSF2715 typical performance characteristics figure 1 on-region characteristics figure 2 transfer characteristics figure 3 on-resista nce variation vs. drain current and gate voltage figure 4 body diode forward voltage variation vs. source current and temperature figure 5 capacitance characteristics fi gure 6 gate charge characteristics
4 SSF2715 typical performance characteristics figure 7 breakdown voltage variation vs. temperature figure 8 on-resistance variation vs. temperature figure 9 maximum safe operation area figure 10 maximum drain current vs. case temperature figure 12 transient thermal response curve
5 SSF2715 test circuit and waveform gate charge test circuit & waveform resistive switching test circuit & waveform unclamped inductive switching test circuit & waveform
6 SSF2715 mechanical dimensions to-220
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